A 5.9/26.5-GHz Dual-Band Concurrent Low Noise Amplfier for 5G NR C-V2X

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초록

This paper presents a 5.9/26.5-GHz dual-band concurrent low noise amplifier (LNA) for 5G NR C-V2X. The proposed dual-band LNA is used cascode structure to implement similar gains in two distant frequency bands in a compact area and simple architecture. The dual-band matching circuit, which implements both input and output for a compact area, consists of an LC parallel circuit and a CLC pi network circuit. The measured S11, S22, S21, and NF were, -17.7, -9.2, 16.5, and 1.69 dB at 5.9 GHz, and -14, -12, 17.4, and 2.98 dB at 26.5 GHz, with 18mW under 2 V supply voltage, designed by using the 0.15-μm GaAs p-HEMT process © 2024 IEEE.

키워드

5G5G NR C-V2Xconcurrentdual-bandGaAs p-HEMT processLNA
제목
A 5.9/26.5-GHz Dual-Band Concurrent Low Noise Amplfier for 5G NR C-V2X
저자
Kim, SunghyukLee, SongjuneKim, DabinKim, Min-SuKim, Junghyun
DOI
10.1109/APMC60911.2024.10867693
발행일
2025-02
유형
Proceedings Paper
저널명
2024 IEEE ASIA-PACIFIC MICROWAVE CONFERENCE, APMC
페이지
1156 ~ 1158