Molecular layer deposition of tin-based organic-inorganic hybrid films as photoresists

초록

The introduction of extreme ultraviolet (EUV) lithography, a next-generation lithography technology, has driven the need to develop new resists for applications in scaled devices. Metal-based inorganic resists with high EUV absorption efficiencies are suitable EUV resist candidates because they have high etch resistance owing to their excellent mechanical strength even at thin thickness. Among these inorganic resists, organic-inorganic hybrid films grown by molecular layer deposition (MLD) enable precise thickness control using layer-by-layer technology and overcome the light dispersion issues in wet-deposited inorganic resists. Therefore, we investigated tin-based organic-inorganic hybrid films (tincone films) deposited via MLD, a vapor-phase deposition method. Additionally, the chemical properties with and without exposure to deep ultraviolet (DUV) radiation were evaluated. Finally, by securing the patterning results using DUV, we suggest that tincone films can be applied as resists for emerging EUV lithography.

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