Self-purification model for metal-assisted chemical etching of metallurgical silicon

Li, Xiaopeng; Xiao, Yanjun; Yan, Chenglin; Zhou, Keya; Miclea, Paul-Tiberiu; Meyer, Sylke; Schweizer, Stefan L.; Sprafke, Alexander; Lee, Jung-Ho; Wehrspohn, Ralf B.

doi:10.1016/j.electacta.2014.05.048

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Self-purification model for metal-assisted chemical etching of metallurgical silicon

Li, Xiaopeng;
Xiao, Yanjun;
Yan, Chenglin;
Zhou, Keya;
Miclea, Paul-Tiberiu;
... Lee, Jung-Ho;
외 4명

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초록

Metal-assisted chemical etching (MaCE) of metallurgical-grade silicon (MG-Si) has improved the purity of MG-Si (similar to 99%) to close to solar-grade (similar to 99.9999%) by removing metal impurities during the successful preparation of porous silicon nanowires (SiNWs). A new etching principle is proposed to explain the different levels of chemical reduction between various metal impurities with pore formation during etching. This model provides chemical insights into the relationship between dissolved metal ions and pores evolved during the formation of SiNWs. (C) 2014 Elsevier Ltd. All rights reserved.

키워드

Metal assisted chemical etching; metallurgical silicon; purification effect; transitional metal impurity; etching model; HYDROMETALLURGICAL PURIFICATION; NANOWIRES; SURFACE

제목: Self-purification model for metal-assisted chemical etching of metallurgical silicon

저자: Li, Xiaopeng; Xiao, Yanjun; Yan, Chenglin; Zhou, Keya; Miclea, Paul-Tiberiu; Meyer, Sylke; Schweizer, Stefan L.; Sprafke, Alexander; Lee, Jung-Ho; Wehrspohn, Ralf B.

DOI: 10.1016/j.electacta.2014.05.048

발행일: 2014-08

유형: Article

저널명: Electrochimica Acta

권: 138

페이지: 476 ~ 480

언어: ENG

출판사: PERGAMON-ELSEVIER SCIENCE LTD

발행국가: 영국

분량: 5 페이지

ISSN: E 1873-3859
P 0013-4686