Electro-Thermal Analysis of Quantum Dot Light-Emitting Diode as Pixel Areas Using Thermoreflectance Microscopy

Shin, Yongjin; Kim, Min Seok; Kim, Daehong; Kim, Jaekyun; Cho, Seong-Yong; Shin, SangHoon; Kim, Younghyun

doi:10.1109/EDTM65772.2026.11497845

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Electro-Thermal Analysis of Quantum Dot Light-Emitting Diode as Pixel Areas Using Thermoreflectance Microscopy

Shin, Yongjin;
Kim, Min Seok;
Kim, Daehong;
Kim, Jaekyun;
Cho, Seong-Yong;
... Shin, SangHoon;
... Kim, Younghyun

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초록

Quantum dot light-emitting diodes (QD-LEDs) have emerged as a promising device for next-generation displays. Electrical, optical, and thermal properties depend not only on the material properties of the QDs but also on the device area of QD-LEDs. Thermoreflectance microscopy (TRM) was employed to understand self-heating effect (SHE) depending on geometry of QD-LED quantitatively. These results will provide the foundation for utilizing QD-LED by resolving reliability issues with thermal aging as a next-generation display device. © 2026 IEEE.

키워드

Current/Power density; QD-LED; Self-heating effect; Thermoreflectance microscopy

제목: Electro-Thermal Analysis of Quantum Dot Light-Emitting Diode as Pixel Areas Using Thermoreflectance Microscopy

저자: Shin, Yongjin; Kim, Min Seok; Kim, Daehong; Kim, Jaekyun; Cho, Seong-Yong; Shin, SangHoon; Kim, Younghyun

DOI: 10.1109/EDTM65772.2026.11497845

발행일: 2026-05

유형: Conference paper

저널명: 10th IEEE Electron Devices Technology and Manufacturing Conference: Emerging Semiconductor Devices and Manufacturing Technologies, EDTM 2026