Grain orientation dependent switching kinetics of SrBi2Ta2O9 ferroelectric thin films

초록

SrBi2Ta2O9 (SBT) thin films with various grain orientations: (001) oriented, partially oriented, or (116) oriented films were grown by an rf magnetron sputtering deposition method. The grain orientations of the films were controlled by the substrate orientation and the deposition temperature. The remanent polarizations were about 3-5 and 10 muC/cm(2) in partially oriented films and (116) oriented films, respectively. There were no significant polarization fatigues for all films, and their leakage current densities were about 10(-8) A/cm(2) at 150 kV/cm. The activation fields were measured from the switching currents of the samples. The remanent polarizations and the activation fields of various films were explained in conjunction with the inclination of SBT grains to the film surface.

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