Quantitative Analysis of Surface Potential Fluctuation at MOS Interfaces Using Conductance Method

초록

The surface potential fluctuation ( sigma(s) ), determined by broadening of conductance curves in the conductance method, is an interesting quantity because sigma(s) can be interpreted to be related to the total amount of MOS interface charges. Although the conductance method is widely used to evaluate interface state density, the quantitative relationship between sigma(s) and MOS interface charges has not been fully investigated yet. In this research, the relationship between sigma(s) and interface charges is quantitatively examined by utilizing interface charge generation by Fowler-Nordheim (FN) injection and is compared with a theoretical model. As a result, it has been experimentally verified that sigma s can be universally expressed as a function of an areal density of total interfacial charges with a specific power law relationship, which is 0.5. This result is well explained by the theoretical model.

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