GaAs HBT 공정을 이용한 주파수 분배 방식의 광대역 구동증폭기 설계

초록

In this paper, a frequency split type broadband drive amplifier operating in the L, S and C bands was designed and fabricated. Transistor is difficult to efficiently use when the fractional bandwidth of the drive amplifier is more than 100%, In particular, the characteristics of the driving amplifier are important for operating the power amplifier in which the characteristics of the output power and the efficiency are sensitively changed according to the frequency band. A frequency split methods was applied to maximize the bandwidth of a drive amplifier and to divide the output of the drive amplifier into low band and high band so that the transistor of the power amplifier located at the rear of the drive amplifier can be efficiently used. The designed drive amplifier was fabricated in GaAs HBT technology and 9-layer SiP, and verified by the measurements. The fabricated drive amplifier shows a gain of more than 8 dB and an output power of more than 15 dBm in the operating frequency range.

키워드