Impact of Zr content in atomic layer deposited Hf1−xZrxO2 thin films

초록

Atomic layer deposition (ALD) is the most preferred film growth process of the ferroelectric Hf1−x Zr x O2 thin films (x∼0.5) due to its characteristic self-limiting growth behavior. Mass production of high-k HfO2 and ZrO2 films in logic transistors and dynamic random access memory capacitors, respectively, has manifested the advantage of ALD in the fabrication process. This chapter reviews research on the atomic layer deposited Hf1−x Zr x O2 thin films. The effects of various factors, such as film thickness, Zr/(Hf+Zr) ratio, deposition temperature, annealing atmosphere, and annealing temperature, on the chemical, physical, and resulting electrical properties are systematically examined based on the previous studies. This chapter will summarize the experimental and theoretical results from various research groups and suggest future research directions.

키워드