Fabrication of 3D Micron T-Shaped SiC/Silicone Rubber Composites With Nonlinear Conductivity

초록

Polymer-based electronic packaging materials often suffer from surface charge accumulation and transient overvoltage, creating a need for advanced self-adaptive dielectrics with nonlinear conductive properties. In this work, a switching DC/AC electric field-induced self-assembly method was developed to fabricate three-dimensional micron T-shaped silicon carbide/silicone rubber (T-SiC) composite films with a low filler loading of 2 vol%. By utilizing an electrode-insulator-suspension-electrode system, the SiC fillers were directed to self-assemble into a unique architecture comprising a SiC-enriched upper surface connected by chain-like structures across the film thickness. Electrical measurements demonstrated pronounced nonlinear conduction in the T-SiC films, with resistance decreasing sharply under high electric fields. Under high-voltage nanosecond pulses (3 kV, 100 ns), the T-SiC films exhibited rapid surface charge dissipation, effectively preventing charge accumulation and suppressing voltage escalation. Furthermore, a nondestructive indirect technique combining scanning electron microscopy and image processing was developed to quantify micrometer-scale surface charge distribution. The SiC-enriched surface showed negligible charge buildup, whereas the SiC-sparse surface exhibited localized accumulation. These findings highlight T-SiC films as promising candidates for high-reliability electronic packaging materials.

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