In-situ X-ray photoelectron spectroscopy of trimethyl aluminum and water half-cycle treatments on HF-treated and O 3-oxidized GaN substrates

초록

We have investigated the effect of trimethyl aluminum (TMA) and water (H 2O) half-cycle treatments on HF-treated, and O 3-oxidized GaN surfaces at 300 °C. The in-situ X-ray photoelectron spectroscopy results indicate no significant re-growth of Ga-O-N or self-cleaning on HF-treated and O 3-oxidized GaN substrates with exposure to water and TMA. This result is different from the self-cleaning effect of Ga 2O 3 seen on sulfur-treated GaAs or InGaAs substrates. O 3 causes aggressive oxidation of GaN substrate and direct O-N bonding compared to H 2O.

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