Fractal Dimension of Conducting Paths in Nickel Oxide (NiO) Thin Films During Resistance Switching

  • Yoo, In Kyeong; 
  • Kang, Bo Soo; 
  • Ahn, Seung Eon; 
  • Lee, Chang Bum; 
  • Lee, Myoung Jae; 
  • 외 2명
Citations

WEB OF SCIENCE

26
Citations

SCOPUS

29

초록

A resistance-switching model in nickel oxide thin film is proposed based on Poisson distribution of electrical switching power. Conductive percolating network in soft breakdown surface may be the source of resistance switching. The main body of network may remain unchanged, but a portion of network is broken and healed repeatedly during switching. Dependence of reset current on electrode area is explained by fractal dimension.

키워드

Nickel oxide; resistance switching; soft breakdown; switching power; DIELECTRIC-BREAKDOWN; MODEL
제목
Fractal Dimension of Conducting Paths in Nickel Oxide (NiO) Thin Films During Resistance Switching
저자
Yoo, In Kyeong; Kang, Bo Soo; Ahn, Seung Eon; Lee, Chang Bum; Lee, Myoung Jae; Park, Gyeong-Su; Li, Xiang-Shu
DOI
10.1109/TNANO.2010.2041670
발행일
2010-03
유형
Letter
저널명
IEEE Transactions on Nanotechnology
권
9
호
2
페이지
131 ~ 133