Adsorption of sodium dodecyl sulfate on cleaning of an N-polar GaN surface in an alkaline solution

  • Kim, Min-Su; 
  • Paluvai, Nagarjuna Reddy; 
  • Kim, Hyun-Tae; 
  • Park, Jin-Goo
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초록

The present study investigated the removal of contaminated particles from a polished N-polar GaN surface using an alkaline cleaning solution along with sodium dodecyl sulfate (SDS) surfactant. The zeta potential, etch rate, and particle removal efficiency (PRE) of N-polar GaN surfaces were reported. A lower etch rate and smoother N-polar GaN surface were obtained when the surface is treated with a diluted NH4OH solution. However, the etch rate and PRE of the N-polar GaN surface increased as a function of the pH of the NH4OH solution. The PRE of the N-polar GaN surface reached to 96% at pH 10 with a high surface roughness of 0.5 nm. SDS was added to the ammonia solutions to control the surface roughness. The N-polar GaN surface reached 100% PRE and surface roughness shown less than 0.4 nm when cleaned in a diluted NH4OH solution with 5 mM SDS surfactant in a megasonic bath. (C) 2017 Elsevier B.V. All rights reserved.

키워드

N-polar GaN surface; Wafer bonding; Particle removal efficiency (PRE); Surface roughness; Sodium dodecyl sulfate (SDS); VAPOR-PHASE EPITAXY; GALLIUM NITRIDE; LAYER; ALN; TEMPERATURE; DEPOSITION; GROWTH; GAN(0001); REMOVAL
제목
Adsorption of sodium dodecyl sulfate on cleaning of an N-polar GaN surface in an alkaline solution
저자
Kim, Min-Su; Paluvai, Nagarjuna Reddy; Kim, Hyun-Tae; Park, Jin-Goo
DOI
10.1016/j.mseb.2017.04.003
발행일
2017-08
유형
Article
저널명
Materials Science & Engineering B
권
222
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1 ~ 6