Bipolar resistance switching in NiO/ITO heterojunction

초록

We prepared poly-crystalline NiO/ITO heterojunction structure using RF magnetron sputtering for application to resistance switching memory device. The deposition temperature for NiO and ITO layers was 350oC and room temperature, respectively. Platinum was used as top and bottom electrodes. The Pt/NiO/ITO/Pt structure with top electrode area of 30 μm showed a typical bipolar resistance switching. A repetitive switching over 100 times was observed. The switching behavior can be explained by modulation of Schottky barrier height due to the migration of oxygen vacancy at the NiO/ITO interface.