Room temperature magnetoresistance of horizontally aligned Mn-doped ZnO nanowires on terrace edges

초록

We investigated Mn-doped ZnO nanowires (NWs) laterally aligned on each terrace edge of a sapphire substrate. The Mn-doped ZnO NWs were prepared by a step edge decoration method combined with pulsed laser deposition. The Mn-doped ZnO NWs exhibited strain effects as a function of NW diameters and room temperature ferromagnetism, which are characterized by X-ray scattering and a magnetization hysteresis loop, respectively. In addition, the magnetoresistance of the Mn-doped ZnO NWs as a diluted magnetic semiconductor is found to be -0.2% for 3 T at room temperature.

키워드