Dual-Insulation Strategies for Electrical Crosstalk Suppression in High-Resolution Quantum Dot Electroluminescent Devices

초록

In pixelated quantum dot electroluminescent (QD-EL) devices, electrical crosstalk arising from the direct contact of charge transport layers (CTLs) in non-emissive regions, degrade device stability and performance. We present a dual strategy for suppressing electrical crosstalk: light-assisted modification and insulator-integrated modification. Using both approaches, we can fabricate single-color micro QD-EL devices exceeding 3,000 pixels per inch (PPI).

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