Frank–van der Merwe Growth versus Volmer–Weber Growth in Successive Stacking of a Few-Layer Bi2Te3/Sb2Te3 by van der Waals Heteroepitaxy: The Critical Roles of Finite Lattice-Mismatch with Seed Substrates

  • Heo, Hoseok; 
  • Sung, Ji Ho; 
  • Ahn, Ji-Hoon; 
  • Ghahari, Fereshte; 
  • Taniguchi, Takashi; 
  • 외 3명
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초록

Different growth mechanisms of van der Waals heteroepitaxial 2D Bi2Te3/Sb2Te3 stacking by choosing different substrates are reported. Sequential Bi2Te3/Sb2Te3 stacking growth mode becomes layer-by-layer growth on h-BN substrates, and 3D island growth on SiO2/Si. Compressive strain in the h-BN substrates imposed by the lattice mismatch plays a crucial role to determine different growth modes in these 2D nucleation kinetics models.

키워드

2D materials; metal chalcogenide; superlattice; thin film growth modes; van der Waals epitaxy; VAPOR-DEPOSITION GROWTH; EPITAXIAL-GROWTH; VERTICAL HETEROSTRUCTURES; SURFACE-STATES; MONOLAYER MOS2; THIN-FILMS; DIFFUSION; GRAPHENE; KINETICSSTRAIN
제목
Frank–van der Merwe Growth versus Volmer–Weber Growth in Successive Stacking of a Few-Layer Bi2Te3/Sb2Te3 by van der Waals Heteroepitaxy: The Critical Roles of Finite Lattice-Mismatch with Seed Substrates
저자
Heo, Hoseok; Sung, Ji Ho; Ahn, Ji-Hoon; Ghahari, Fereshte; Taniguchi, Takashi; Watanabe, Kenji; Kim, Philip; Jo, Moon Ho
DOI
10.1002/aelm.201600375
발행일
2017-01
유형
Article
저널명
Advanced Electronic Materials
권
3
호
2
페이지
1 ~ 7