Reproducible resistive switching in Cu/a-Si/Si structures with micron-sized active device area

초록

We prepared amorphous silicon (a-Si) based memory device structures and investigated their resistive switching (RS) behaviors. Copper (Cu) layers and highly doped silicon substrates were used as top and bottom electrodes, respectively. The Cu/a-Si/Si structures, with active device diameter ranging from 2 to 50 micron, exhibited bipolar RS. Systematic and careful characterizations showed that compliance current and device area were important parameters, enabling repetitive RS behaviors. ON/OFF resistance ratio was as large as 107, and the resistance switching could be repeated over 100 times. The Cu/a-Si/Si structures have advantages over other material systems, since all the constituent materials and processing techniques are compatible with mass-production-level fabrication technology.