Pulsed gate voltage measurement for charge mobility extraction of organic transistors

  • Kim, Min-Jae; 
  • Ham, Dong Seok; 
  • Park, Hyunjin; 
  • Lim, Kyung-Geun; 
  • Lee, Hwa Sung; 
  • 외 3명
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4
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SCOPUS

5

초록

The field-effect mobility of organic semiconductors is an important parameter that describes a physical char-acteristic of charge carriers and is extracted from the current-voltage characteristics of field-effect transistors. For the parameter to be consistent with its physical definition, charge transport in organic semiconductors should be in a steady state. However, charge transport in organic field-effect transistors is often in a non-steady state because of the occurrence of charge-carrier trapping and the Joule heating effect; therefore, careful attention is required for the extraction of the field-effect mobility in such cases. In this study, the effects of gate pulses on the transport characteristics of organic field-effect transistors are investigated. Consequently, an ideal sequence of gate pulses to minimize the effects of intermediate trap states and Joule-heating during extraction of the field-effect mobility of organic transistors is proposed. Finally, an equation that relates the field-effect mobility to the sequence of gate pulses is derived and experimentally validated.

키워드

Organic transistor; Mobility; Pulsed voltage measurement; Charge trapping; Joule heating; SELF-ASSEMBLED MONOLAYERS; MORPHOLOGY; TRANSPORT; SURFACE
제목
Pulsed gate voltage measurement for charge mobility extraction of organic transistors
저자
Kim, Min-Jae; Ham, Dong Seok; Park, Hyunjin; Lim, Kyung-Geun; Lee, Hwa Sung; Lee, Sungjoo; Lee, Hyo Chan; Kang, Boseok
DOI
10.1016/j.orgel.2022.106631
발행일
2022-11
유형
Article
저널명
Organic Electronics
권
110
페이지
1 ~ 7