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Pulsed gate voltage measurement for charge mobility extraction of organic transistors
- Kim, Min-Jae;
- Ham, Dong Seok;
- Park, Hyunjin;
- Lim, Kyung-Geun;
- Lee, Hwa Sung;
- 외 3명
WEB OF SCIENCE
4SCOPUS
5초록
The field-effect mobility of organic semiconductors is an important parameter that describes a physical char-acteristic of charge carriers and is extracted from the current-voltage characteristics of field-effect transistors. For the parameter to be consistent with its physical definition, charge transport in organic semiconductors should be in a steady state. However, charge transport in organic field-effect transistors is often in a non-steady state because of the occurrence of charge-carrier trapping and the Joule heating effect; therefore, careful attention is required for the extraction of the field-effect mobility in such cases. In this study, the effects of gate pulses on the transport characteristics of organic field-effect transistors are investigated. Consequently, an ideal sequence of gate pulses to minimize the effects of intermediate trap states and Joule-heating during extraction of the field-effect mobility of organic transistors is proposed. Finally, an equation that relates the field-effect mobility to the sequence of gate pulses is derived and experimentally validated.
키워드
- 제목
- Pulsed gate voltage measurement for charge mobility extraction of organic transistors
- 저자
- Kim, Min-Jae; Ham, Dong Seok; Park, Hyunjin; Lim, Kyung-Geun; Lee, Hwa Sung; Lee, Sungjoo; Lee, Hyo Chan; Kang, Boseok
- 발행일
- 2022-11
- 유형
- Article
- 권
- 110
- 페이지
- 1 ~ 7
- 언어
- ENG
- 출판사
- ELSEVIER
- 발행국가
- 네덜란드
- 분량
- 7 페이지
- ISSN
- E 1878-5530
P 1566-1199