Contamination Mechanism of Ceria Particles on the Oxide Surface after the CMP Process

초록

The contamination behavior of ceria particles (50 and 100 nm) with oxide surfaces at pH 4 and 8 was studied using dipping and polishing conditions. Higher contamination at pH 4 than pH 8 was observed for dipping cases. In contrast, pH 8 conditions produced higher contamination than pH 4 for polishing cases. The difference in the contamination between dipping and polishing could be attributed to electrostatic attraction and chemical bonding. During polishing, weak or no chemical bonding may occur at pH 4, whereas the Ce-O-Si bond may form due to the surface charges of ceria and silica at pH 8. XPS analysis revealed that strong additional peaks related to Ce-O-Si bonding were detected for O 1s spectra at a binding energy of around 532 eV for surfaces polished at pH 8. Similar results were observed for 50 nm as well as 100 nm ceria particles. Based on the results, we concluded that ceria particles would have different adhesion behaviors for dipping and polishing at the same pH value. Also, higher ceria adhesion was observed at higher pH compared to lower pH during the CMP process, which was correlated to strong Ce-O-Si chemical bond formation due to the CMP conditions.

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