수소화물 기상 성장법에 의해 성장된 마이크로 구리 구슬의 특성

초록

Single-crystalline copper microspheres were grown at a high temperature of T = 1150 ◦C for 2 h by using the mixed-source hydride vapor phase epitaxy (HVPE) method in a simplified reactor interlinked in series without any separation between the growth and the source zones. The single-crystalline copper microspheres in the first growth process were grown on a metallic compound graphite substrate composed of 15 wt% copper and 85 wt% carbon by using a graphite boat filled with a mixed source of Al+Ga+Mg in the source zone. The copper microspheres coated by using the mixed source in the second growth process were grown on copper microspheres that had been grown on a quartz substrate with holes at a high temperature of T = 1150 ◦C for 2 h by using a graphite boat filled with a mixed source of Al+Ga+Mg in the source zone after cooling the single-crystalline copper microspheres. The copper microspheres grown were characterized by using scanning electron microscopy (SEM), energy dispersive spectrometry (EDS), and X-ray diffraction (XRD). © The Korean Physical Society. All rights reserved.

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