Wet-Transferred MoS2 on Passivated InP: A Van der Waals Heterostructure for Advanced Optoelectronic Applications

초록

III-V semiconductors are considered ideal materials for optoelectronic applications due to their direct bandgap and wide tunable range of bandgap energy. However, optoelectronic devices based on III-V have been plagued by significant surface recombination due to imperfect surface bonding. Meanwhile, 2D transition metal dichalcogenides (TMDs) exhibit unique electrical properties, including a dangling bond-free surface, which has led to extensive research into their potential for electronic applications. However, optical devices such as photodetectors utilizing 2D-TMDs have received relatively little attention, primarily because they are inefficient at absorbing photons independently. In this study, a photodetector employing atomically thin layers of MoS2 on InP substrate is demonstrated. The n-MoS2/p-InP device exhibits excellent rectifying properties with an ideality factor of 1.57, indicating the formation of a type-II staggered heterojunction. The photoresponsivity of the heterojunction device is measured across a wavelength range of 300-1000 nm, with a maximum value of 960 mA W-1. Notably, the MoS2 layers provide a stable passivation effect on the imperfect InP crystal surface.

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