Structural, Optical, and Electrical Characteristics of Metastable -phase Ga2O3 Grown by Metal-Organic Chemical Vapor Deposition Using H2O as an Oxygen Precursor

초록

We report on the structural, optical, and electrical characteristics of metastable is-Ga 2 O 3 epitaxially grown on a c-plane sapphire substrate by a metal organic chemical vapor deposition system using H2O 2 O as an oxygen precursor. The effects of key epitaxial growth parameters such as group III molar flow rate, H2O 2 O vapor flow rate, and types of carrier gas were systematically studied by x-ray diffraction, atomic force microscopy, and photoluminescence measurements. The group III molar flow rate was shown to strongly affect the growth rate and root mean square roughness. On the other hand, the H2O 2 O flow rate was found to be a critical factor for uniform surface coverage. Furthermore, we show that growth using N2 2 as a carrier gas, instead of conventional H2 2 carrier gas, can lead to higher Hall electron mobility, which was measured after post-growth annealing.

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