Dynamic Multiplexer-Driven Level Shifter with High Common-Mode Transient Immunity and Sub-ns Transfer Delay for GaN Gate Drivers

초록

High-speed GaN gate drivers in half-bridge setupsgenerate extreme voltage slew rates at the floating high-sidenode, compromising traditional level shifter reliability. Pulsetriggereddesigns face fundamental trade-offs between transferdelay reduction and common-mode transient immunity(CMTI) enhancement. This paper proposes a dynamic MUXdrivenlevel shifter that senses internal latch nodes and highsideswitch status to adaptively reconfigure current paths. During signal propagation, it enhances latch drive foraccelerated transfer; during high-CMTI noise intervals, itmaintains differential current balance to reject disturbances. Fabricated in 180 nm BCD process, the circuit achieves 886 psdelay and 200 V/ns CMTI, outperforming traditional PTACdesigns for GaN applications.

키워드

GaNLevel shifterCommon-mode transient immunityTransfer delayGate driver
제목
Dynamic Multiplexer-Driven Level Shifter with High Common-Mode Transient Immunity and Sub-ns Transfer Delay for GaN Gate Drivers
저자
Ahn, Heechan Roh, Jeong jin
DOI
10.23075/jicas.2026.12.2.009
발행일
2026-04
유형
Y
저널명
IDEC Journal of Integrated Circuits and Systems
12
2
페이지
47 ~ 51