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High-current-density CuOx/ZnOx thin-film diodes for cross-point memory applications
- Kang, Bo Soo;
- Ahn, Seung-Eon;
- Lee, Myoung-Jae;
- Stefanovich, Genrikh;
- Kim, Ki Hwan;
- 외 5명
Citations
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109초록
Room-temperature-deposited CuOx/InZnOx thin-film heteroJunction diodes show a high current density of 3.5 X 10(4) A cm(-2) and a high on/off current ratio of 10(6) (see figure). The oxide diode is a promising switch element for three-dimensional stackable memory devices, where high-temperature-prepared silicon diodes are difficult to apply.
키워드
CURRENT-VOLTAGE CHARACTERISTICS; LOW-TEMPERATURE; OXIDE-FILMS; TRANSPARENT; RESISTANCE; FABRICATION; CURRENT-VOLTAGE CHARACTERISTICS; OXIDE; TRANSPARENT; RESISTANCE; FABRICATION
- 제목
- High-current-density CuOx/ZnOx thin-film diodes for cross-point memory applications
- 저자
- Kang, Bo Soo; Ahn, Seung-Eon; Lee, Myoung-Jae; Stefanovich, Genrikh; Kim, Ki Hwan; Xianyu, Wen Xu; Lee, Chang Bum; Park, Youngsoo; Baek, In Gyu; Park, Bae Ho
- 발행일
- 2008-08
- 유형
- Article
- 권
- 20
- 호
- 16
- 페이지
- 3066 ~ 3069
- 언어
- ENG
- 출판사
- WILEY-V C H VERLAG GMBH
- 발행국가
- 독일
- 분량
- 4 페이지
- ISSN
- E 1521-4095
P 0935-9648