유리 기판에서 RF 마그네트론 스퍼터링법으로 증착한 비정질 투명전극 스트론튬 루세네이트 박막 두께에 따른 광학 및 전기적 특성

초록

The SrRuO3 electrode can improve the dielectric properties of the perovskite structure. Thus, it is the most suitable electrode material for Dynamic Random-Access Memory (DRAM). This study was conducted to investigate the possibility of the SrRuO3 thin film as a transparent conductive oxide (TCO). In this study, an SrRuO3 thin film was deposited on the glass substrates by the RF magnetron sputtering method at room temperature. To observe the difference in optical and electrical properties as per the thin film thickness, the deposition times were set to 5 and 50 min. As the deposition time increased, the film thickness increased from 5 to 68 nm, the optical transmittance decreased from 80% to 40%, and the resistivity (an electrical property) increased from 1.99 to 26.3 mΩ·cm. Consequently, when the SrRuO3 thin films were deposited on the glass substrates for 5 min, a transmittance of about 80% or more, a band gap of 4.57 eV, and a resistivity of 1.99 mΩ·cm were observed, thus verifying that an SrRuO3 electrode can improve the dielectric properties of perovskite.

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