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A next-generation light-emitting device: ZOGAN LED with a heterogeneous p-layer composed of oxide and nitride semiconductors
- Ryu, Yung Ryel;
- Hong, Sung Ki;
- Schubert, E. Fred;
- Jeon, Dong-Min;
- Shin, Dong-Soo;
- 외 3명
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3초록
We have developed a light-emitting device, called the ZOGAN light-emitting diode (LED). The ZOGAN LED is formed with the p-layer composed of both ZnO-based oxide and GaN-based nitride semiconductors. The ZOGAN LED shows the characteristics of light-emitting devices required for ultra-high-resolution displays. © 2024 Author(s).
키워드
2-DIMENSIONAL ELECTRON-GAS; EFFICIENCY; DIODES; ELECTROLUMINESCENCE; DEPOSITION; ZNO
- 제목
- A next-generation light-emitting device: ZOGAN LED with a heterogeneous p-layer composed of oxide and nitride semiconductors
- 저자
- Ryu, Yung Ryel; Hong, Sung Ki; Schubert, E. Fred; Jeon, Dong-Min; Shin, Dong-Soo; Shim, Jong-In; Kim, Sang-Mook; Baek, Jong Hyeob
- 발행일
- 2024-04
- 유형
- Article
- 저널명
- AIP Advances
- 권
- 14
- 호
- 4
- 페이지
- 1 ~ 7
- 언어
- ENG
- 출판사
- AIP Publishing
- 발행국가
- 미국
- 분량
- 7 페이지
- ISSN
- E 2158-3226