Low-frequency noise characteristics of InGaN-based light-emitting diodes

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초록

We investigate the low-frequency noise characteristics of InGaN-based light-emitting diodes with different forward leakage currents. It is found that the low-frequency noise characteristics are closely correlated with the forward leakage current. © 2015 IEEE.

키워드

III-V semiconductors; Leakage currents; Light emitting diodes; Spurious signal noise; Low-frequency noise characteristics; Light
제목
Low-frequency noise characteristics of InGaN-based light-emitting diodes
저자
Oh, Chan-Hyoung; Han, Dong-Pyo; Shin, Dong Soo; Shim, Jong In
DOI
10.1109/CLEOPR.2015.7376075
발행일
2016-01
유형
Conference Paper
저널명
2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015
권
2
페이지
1 ~ 2