Atomic layer deposition of selective SiO2 thin films using silane self-assembled monolayers on silicon versus amorphous carbon

초록

As semiconductor devices continue to shrink toward sub-5 nm features, area-selective atomic layer deposition (AS-ALD) has emerged as a transformative technique for simplifying multiple patterning processes, reducing complexity, and addressing misalignment challenges associated with conventional lithography-based patterning methods. In this study, we evaluated the blocking efficacy of dodecyltrichlorosilane (DDTS) self-assembled monolayers (SAMs) on silicon (Si) versus amorphous carbon (a-C) substrates. By leveraging the chemoselective adsorption of DDTS SAMs on Si substrates, we successfully achieved selective deposition of SiO2 thin films exclusively on a-C surfaces. Notably, the growth of SiO2 films on DDTS SAM-treated Si surface was suppressed by up to 3 nm, even under the highly reactive conditions of the ALD process using O3 reactant. This approach highlights the potential of bottom-up nanopatterning techniques to enable advanced nanofabrication.

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