3D Unipolar Resistance Switching Memory Array Using NiO Storage Node and CuO/InZnO Diode

초록

Recently, there were a lot of studies on the application of unipolar resistance switching phenomena of metal oxide thin films such as NiO to memory devices. The memory density of this electrically-operated two-terminal device is maximized when it is made into 1D1R cross-point array with one diode and one resistance change element serially connected between the electrode lines. Since high temperature processes of the current silicon technology is prone to induce degradation of the underlying layers, low temperature process of non-Si semiconductors is favored. We have fabricated CuO/InZnO thin film diode with high current density and high on/off ratio using RF sputtering at room temperature. Degradation of Pt/InZnO Schottky diode and the control of the diode polarity using surface treatment are also discussed.