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Upgraded Silicon Nanowires by Metal-Assisted Etching of Metallurgical Silicon: A New Route to Nanostructured Solar-Grade Silicon
- Li, Xiaopeng;
- Xiao, Yanjun;
- Bang, Jin Ho;
- Lausch, Dominik;
- Meyer, Sylke;
- ... Lee, Jung-Ho;
- 외 4명
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70초록
Through metal-assisted chemical etching (MaCE), superior purification of dirty Si is observed, from 99.74 to 99.9884% for metallurgical Si and from 99.999772 to 99.999899% for upgraded metallurgical Si. In addition, large areas of silicon nanowires (SiNW) are fabricated. The purification effect induces a similar to 35% increase in photocurrent for a SiNW based photoelectrochemical cell.
키워드
metal assisted chemical etching; metallurgical silicon; silicon nanowire; metal impurities; photoelectrochemical cell; HYDROMETALLURGICAL PURIFICATION; GROWTH
- 제목
- Upgraded Silicon Nanowires by Metal-Assisted Etching of Metallurgical Silicon: A New Route to Nanostructured Solar-Grade Silicon
- 저자
- Li, Xiaopeng; Xiao, Yanjun; Bang, Jin Ho; Lausch, Dominik; Meyer, Sylke; Miclea, Paul-Tiberiu; Jung, Jin-Young; Schweizer, Stefan L.; Lee, Jung-Ho; Wehrspohn, Ralf B.
- 발행일
- 2013-06
- 유형
- Article
- 권
- 25
- 호
- 23
- 페이지
- 3187 ~ 3191
- 언어
- ENG
- 출판사
- WILEY-V C H VERLAG GMBH
- 발행국가
- 독일
- 분량
- 5 페이지
- ISSN
- E 1521-4095
P 0935-9648