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Confocal Photoluminescence and Electroluminescence of Blue InGaN/GaN Nanorod Light-emitting Diodes with Different Passivation Approaches
- Le, Quang Trung;
- Shin, Youngwook;
- Bak, Byeong-U;
- Hwang, Jun Seok;
- Kim, Jaekyun
Citations
SCOPUS
1초록
The sidewall passivation is essential to achieve high micro lightemitting diode (LED) efficiency. We investigated different sidewall passivation strategies on InGaN/GaN blue nLED, including Thermal ALD and PEALD Al2O3. The characterization of temperature and laser excitation-dependent photoluminescence (PL) and time-resolved photoluminescence (TRPL) were observed to determine the efficiency. Sidewall passivated-nLED device was fabricated and characterized. The device exhibits extremely high brightness, even at low operation current. © 2024, John Wiley and Sons Inc. All rights reserved.
키워드
Dielectrophoresis force; GaN/InGaN; Micro LED; nanorod LED; PL spectra; Sidewall Passivation; TRPL
- 제목
- Confocal Photoluminescence and Electroluminescence of Blue InGaN/GaN Nanorod Light-emitting Diodes with Different Passivation Approaches
- 저자
- Le, Quang Trung; Shin, Youngwook; Bak, Byeong-U; Hwang, Jun Seok; Kim, Jaekyun
- 발행일
- 2024-07
- 유형
- Conference paper
- 권
- 55
- 호
- 1
- 페이지
- 1935 ~ 1938