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Radiative and non-radiative carrier lifetimes in InGaN-based light-emitting diodes investigated by impedance analysis
- Kim, Young-Jin;
- Han, Dong-Pyo;
- Lee, Gyeong Won;
- Shin, Dong Soo;
- Shim, Jong In
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0초록
To investigate the efficiency droop in InGaN-based light-emitting diodes, we have measured the differential carrier lifetimes using the electrical method. After separating the radiative and non-radiative carrier lifetimes using the internal quantum efficiency, we discuss their implications. © 2015 IEEE.
키워드
Carrier lifetime; Efficiency; III-V semiconductors; Light; Differential carrier lifetimes; Efficiency droops; Electrical methods; Impedance analysis; Internal quantum efficiency; Non-radiative; Light emitting diodes
- 제목
- Radiative and non-radiative carrier lifetimes in InGaN-based light-emitting diodes investigated by impedance analysis
- 저자
- Kim, Young-Jin; Han, Dong-Pyo; Lee, Gyeong Won; Shin, Dong Soo; Shim, Jong In
- 발행일
- 2016-01
- 유형
- Conference Paper
- 저널명
- 2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015
- 권
- 1
- 페이지
- 1 ~ 2
- 언어
- ENG
- 출판사
- Institute of Electrical and Electronics Engineers Inc.
- 발행국가
- 미국
- 분량
- 2 페이지