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Analysis of recombination mechanisms in InGaN-based light-emitting diodes from electrical and optical characterizations
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SCOPUS
0초록
Various techniques that can give useful information on the nonradiative recombination mechanisms in InGaN-based light-emitting diodes are discussed. Characterization techniques range from the simple current-voltage and light-current measurements to more sophisticated temperature-dependent methods. © OSA 2014
키워드
III-V semiconductors; Photonics; Characterization techniques; Current voltage; Non-radiative recombinations; Optical characterization; Recombination mechanisms; Temperature dependent; Light emitting diodes
- 제목
- Analysis of recombination mechanisms in InGaN-based light-emitting diodes from electrical and optical characterizations
- 저자
- Shin, Dong Soo
- 발행일
- 2014-11
- 유형
- Conference Paper
- 저널명
- Asia Communications and Photonics Conference, ACP
- 권
- 2014-November
- 페이지
- 1 ~ 3
- 언어
- ENG
- 분량
- 3 페이지
- ISSN
- P 2162-108X