Effect of annealing conditions on formation of SrRuO3 films by interfacial reaction of SrO/RuO2 bi-layer films

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초록

In this study, we investigated the effect of annealing conditions on the formation of SrRuO3 films by the interfacial reaction of SrO/RuO2 bi-layer films. We found that the annealing temperature and thickness of the SrO layer along with the annealing atmosphere were critical variables in the formation of the conformal SrRuO3 film. By annealing SrO(20 nm)/RuO2 bi-layer film at 700 °C in O2 atmosphere at 1 Torr, the conformal SrRuO3 film was formed. Finally, we evaluated the potential applicability of the SrRuO3 film as a functional electrode for perovskite-structured dielectrics, and the dielectric constant of SrTiO3 film deposited on the SrRuO3 electrode increased by almost 2.5 times in comparison with that of a film on a Ru electrode. © 2015 Published by Elsevier B.V.

키워드

Atomic layer deposition; Capacitor electrode; Rapid thermal annealing; Strontium ruthenate; INSULATOR-METAL CAPACITORS; CHEMICAL-VAPOR-DEPOSITION; ATOMIC LAYER DEPOSITION; THIN-FILMS; THICKNESS
제목
Effect of annealing conditions on formation of SrRuO3 films by interfacial reaction of SrO/RuO2 bi-layer films
저자
Ahn, Ji-Hoon; Kim, Ja-Yong
DOI
10.1016/j.mee.2015.09.015
발행일
2016-01
저널명
Microelectronic Engineering
권
149
페이지
62 ~ 65