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Photolithography-Based Micro patterning Integration of Quantum-Dot Electroluminescent Displays with Non volatile Charge Trap Memory
- Kim, Eun A.;
- Park, Seoungmin;
- Kim, Younghyun;
- Cho, Seong-Yong
Citations
SCOPUS
0초록
A memory-in-pixel (MIP) is demonstrated using non-volatile charge trap memory with an Al2O3/HfO2/Al2O3 (AHA) structure and integrated quantum dot light-emitting diodes (QDLED).The AHA structure exhibits high charge trapping capacity, achieving a 4.7 V memory window, Ion/off ratio of 108. The integration of QD-LED enables a self-erasing functionality via the photovoltaic effect without an external light source.
키워드
Charge Trap Thin-Film Transistor (CTTFT); High-Resolution Display; Monolithic integration; Quantum Dot Light-Emitting Diodes (QD-LED)
- 제목
- Photolithography-Based Micro patterning Integration of Quantum-Dot Electroluminescent Displays with Non volatile Charge Trap Memory
- 저자
- Kim, Eun A.; Park, Seoungmin; Kim, Younghyun; Cho, Seong-Yong
- 발행일
- 2025-08
- 유형
- Conference Paper
- 권
- 56
- 호
- 1
- 페이지
- 1985 ~ 1987