W-Band Backward Distributed Frequency Doubler Using GaAs 0.15-mu m pHEMT Process

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초록

A novel backward distributed frequency doubler is proposed showing a high output power level without buffer amplifiers. The position of the output port is reversed compared to a conventional distributed structure, and the lengths of the transmission lines are optimized to effectively multiply the frequency and remove the fundamental-frequency signal (f(0)) without additional circuits such as a balun. Thanks to no need of buffer amplifiers at the final stage of the doubler, the proposed circuit was implemented using a low cost, 0.15-mu mGaAs pHEMT process. The measured results show a peak conversion gain and saturated output power of -4.3 dB and 7.1 dBm, respectively, with a 12.3% fractional 3-dB bandwidth. The proposed frequency doubler exhibits a fundamental-frequency rejection of -23 dB at 96 GHz with a moderate chip size of 1.0 x 2.0 mm(2).

키워드

Frequency multiplier; millimeter wave; pseudomorphic high electron transistor (pHEMT); W-band
제목
W-Band Backward Distributed Frequency Doubler Using GaAs 0.15-mu m pHEMT Process
저자
Kim, Minchul; Choi, Kwangseok; Kim, Junghyun
DOI
10.1109/LMWC.2019.2913307
발행일
2019-06
유형
Article
저널명
IEEE Microwave and Wireless Components Letters
권
29
호
6
페이지
400 ~ 402