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W-Band Backward Distributed Frequency Doubler Using GaAs 0.15-mu m pHEMT Process
- Kim, Minchul;
- Choi, Kwangseok;
- Kim, Junghyun
WEB OF SCIENCE
9SCOPUS
12초록
A novel backward distributed frequency doubler is proposed showing a high output power level without buffer amplifiers. The position of the output port is reversed compared to a conventional distributed structure, and the lengths of the transmission lines are optimized to effectively multiply the frequency and remove the fundamental-frequency signal (f(0)) without additional circuits such as a balun. Thanks to no need of buffer amplifiers at the final stage of the doubler, the proposed circuit was implemented using a low cost, 0.15-mu mGaAs pHEMT process. The measured results show a peak conversion gain and saturated output power of -4.3 dB and 7.1 dBm, respectively, with a 12.3% fractional 3-dB bandwidth. The proposed frequency doubler exhibits a fundamental-frequency rejection of -23 dB at 96 GHz with a moderate chip size of 1.0 x 2.0 mm(2).
키워드
- 제목
- W-Band Backward Distributed Frequency Doubler Using GaAs 0.15-mu m pHEMT Process
- 저자
- Kim, Minchul; Choi, Kwangseok; Kim, Junghyun
- 발행일
- 2019-06
- 유형
- Article
- 권
- 29
- 호
- 6
- 페이지
- 400 ~ 402
- 언어
- ENG
- 출판사
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- 발행국가
- 미국
- 분량
- 3 페이지
- ISSN
- E 1558-1764
P 1531-1309