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초록
We confirm that, the PBTS instability, of coplanar, InGaZnO TFTs can be improved, through the minimization of Non-Bridging Oxygen Vole Centers (NBOHC) and, optimization of hydrogen passivation in the GI/ACT interface region. The quantitative analysis of hydrogen and, oxygen in each region are obtained from physical property measurements. Trap density in GI/ACT interface layer is obtained by photonic capacitance-voltage measurements which are correlated, with PBTS characteristics. A decrease of under, coordinated bonding states lessens electron trap density, which brings improvement, in PBTS from Vth = 2.61V to 0.21V by process optimization. © (2017) by SID-the Society for Information Display. All rights reserved.
키워드
A-IGZO; Coplanar; ERDA; Interface trap density (Dit); Oxide TFT; PBTS; Phto C-V method; RBS; Top-gate; XRR; Capacitance; Gallium compounds; Hydrogen; Optimization; Oxygen; Passivation; Reliability analysis; Rubidium; Semiconducting indium compounds; Zinc compounds; A-IGZO; C-V method; Coplanar; ERDA; Interface trap density; Oxide tft; PBTS; Top gate; Thin film transistors
- 제목
- Reliability of coplanar oxide TFTs: Analysis and improvement
- 저자
- Baeck, Ju heyuck; Oh, Saeroonter; Lee, Dohyung; Park, Taeuk park; Bae, Jong uk; Park, Kwon shik; Yoon, Sooyong; Kang, Inbyeong
- 발행일
- 2017-05
- 유형
- Conference Paper
- 권
- 48
- 호
- 1
- 페이지
- 294 ~ 296