상세 보기
Rotation-Misfit-Free Heteroepitaxial Stacking and Stitching Growth of Hexagonal Transition-Metal Dichalcogenide Monolayers by Nucleation Kinetics Controls
- Heo, Hoseok;
- Sung, Ji Ho;
- Jin, Gangtae;
- Ahn, Ji-Hoon;
- Kim, Kyungwook;
- 외 4명
Citations
WEB OF SCIENCE
140Citations
SCOPUS
144초록
2D vertical stacking and lateral stitching growth of monolayer (ML) hexagonal transition-metal dichalcogenides are reported. The 2D heteroepitaxial manipulation of MoS2 and WS2 MLs is achieved by control of the 2D nucleation kinetics during the sequential vapor-phase growth. It enables the creation of hexagon-on-hexagon unit-cell stacking and hexagon-by-hexagon stitching without interlayer rotation misfits. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
키워드
2D materials; heterostructures; hexagonal transition-metal dichalcogenides; monolayer semiconductors; superlattices; LATERAL HETEROSTRUCTURES; VALLEY POLARIZATION; DIRAC FERMIONS; SURFACE-ENERGY; MOS2; GRAPHENE; ABSORPTION; NANOSHEETS
- 제목
- Rotation-Misfit-Free Heteroepitaxial Stacking and Stitching Growth of Hexagonal Transition-Metal Dichalcogenide Monolayers by Nucleation Kinetics Controls
- 저자
- Heo, Hoseok; Sung, Ji Ho; Jin, Gangtae; Ahn, Ji-Hoon; Kim, Kyungwook; Lee, Myoung-Jae; Cha, Soonyoung; Choi, Hyunyong; Jo, Moon-Ho
- 발행일
- 2015-07
- 권
- 27
- 호
- 25
- 페이지
- 3803 ~ 3810
- 언어
- ENG
- 출판사
- WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
- 발행국가
- 독일
- 분량
- 8 페이지
- ISSN
- E 1521-4095
P 0935-9648