상세 보기
Surface preparation in CMP process; post CMP cleaning and defects
Citations
SCOPUS
4초록
Defects due to CMP processes should be removed for next processing step. The zeta potential of slurry particle and substrate has been considered to be a critical factor in terms of particle adhesion and removal The fundamental research such as the calculation interaction force based on DLVO theory and the measurement of adhesion forces by AFM between slurry particle and wafer surfaces can enhance the understanding of cleaning mechanism and development of cleaning process. This paper gives an overview of post CMP cleaning process from fundamentals to the current and future. © The Electrochemical Society.
키워드
(OTDR) technology; Adhesion forces; cleaning processes; CMP processes; DLVO theory; Electrochemical Society (ECS); Fundamental research; Interaction forces; International symposium; Particle adhesion; Post CMP cleaning; Processing step; Semi-conductor cleaning; Slurry particles; Surface conditioning; Surface preparations; wafer surfaces; Adhesion; Blood vessel prostheses; Chemical mechanical polishing; Computer networks; Electric conductivity; Nanotechnology; Semiconductor device manufacture; Semiconductor device models; Semiconductor materials; Semiconductor switches; Spectroscopic analysis; Surface cleaning; Surface defects; Surface properties; Surfaces; Technology; Zeta potential; Cleaning
- 제목
- Surface preparation in CMP process; post CMP cleaning and defects
- 저자
- Park, Jin-Goo; Kim, Tae Gon
- 발행일
- 2007-10
- 유형
- Conference Paper
- 저널명
- ECS Transactions
- 권
- 11
- 호
- 2
- 페이지
- 419 ~ 430
- 언어
- ENG
- 출판사
- Electrochemical Society, Inc.
- 발행국가
- 미국
- 분량
- 12 페이지
- ISSN
- E 1938-6737
P 1938-5862