Degradation Mechanism of Al2O3 Passivation in Nanostructured Si Solar Cells

Song, Jae-Won; Jung, Jin-Young; Um, Han-Don; Li, Xiaopeng; Park, Min-Joon; Nam, Yoon-Ho; Shin, Sun-Mi; Park, Tae Joo; Wehrspohn, Ralf B.; Lee, Jung-Ho

doi:10.1002/admi.201400010

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Degradation Mechanism of Al2O3 Passivation in Nanostructured Si Solar Cells

Song, Jae-Won;
Jung, Jin-Young;
Um, Han-Don;
Li, Xiaopeng;
Park, Min-Joon;
... Park, Tae Joo;
... Lee, Jung-Ho;
외 3명

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13

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SCOPUS

14

초록

The degradation mechanism of Al2O3 passivation on nanostructured Si is resolved by separate considerations of interface state density and fixed charge density at the interface of Al2O3/Si. Using the analysis of surface potentials, it is reported for the first time that the positive interface charges seriously deteriorate the field-effect passivation of Al2O3 on a nanostructured surface.

키워드

Al2O3; antireflective nanostructuring; atomic-layer-deposition; field effect passivation; Si solar cell; SILICON NANOWIRES; RECOMBINATION

제목: Degradation Mechanism of Al2O3 Passivation in Nanostructured Si Solar Cells

저자: Song, Jae-Won; Jung, Jin-Young; Um, Han-Don; Li, Xiaopeng; Park, Min-Joon; Nam, Yoon-Ho; Shin, Sun-Mi; Park, Tae Joo; Wehrspohn, Ralf B.; Lee, Jung-Ho

DOI: 10.1002/admi.201400010

발행일: 2014-08

유형: Article

저널명: Advanced Materials Interfaces

권: 1

호: 5

페이지: 1 ~ 5

언어: ENG

출판사: WILEY

발행국가: 미국

분량: 5 페이지

ISSN: P 2196-7350