Charge retention loss and its mechanism of (Bi,La)(4)Ti3O12 capacitors

초록

We investigated the retention properties of BLT capacitors fabricated by a chemical solution deposition with Pt electrodes. BLT capacitors showed an opposite-state retention loss much better than that of PZT capacitor. On the other hand, BLT capacitors showed a large polarization loss of the same-state retention within I hour baking, while the corresponding loss of PZT was negligible. The hysteresis loops after different baking time showed a negligible imprint and a large relaxation of polarization. These behaviors were explained by a high resistance against imprint and a polarization relaxation possibly due to damaged interfacial layers developed by etching process of the BLT capacitors.

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