An 11B Source-Driver IC with Resistor-Resistor-Embedded (RRE) DAC and Multi-Step Offset Calibration Achieving 1723 μm2/Channel and 1.6 mV DVO for 6285-PPI OLED-On-Silicon Displays

초록

This paper presents an 11b source-driver IC for OLED-onSilicon (OLEDoS) displays that achieves small area by using a three-stage resistor-resistor-embedded (RRE) DAC and lowvoltage DAC. The proposed data-dependent current source (D2CS), spare amplifier, R -share logic, and multi-step offset calibration (MOCU) suppress DVO under massive channel operation. In addition, a proposed high-pass-filter-assisted dynamic current source (HPDCS) enables high frame-rate operation. Fabricated in 65 nm CMOS, the proposed SD-IC achieves a channel area of 1,723 μm2, a maximum DVO of 1.6 mV with a 1000 -channel load, and a settling time of 0.69 μs. © 2026 IEEE.