Noise Properties of Coherent Tunneling Processes in Resonant Interband Tunneling Diode

초록

Tunneling noise properties were studied with SiGe resonant interband tunneling diodes (RITDs). The classification of sub- and super-Poissonian processes was evaluated through a study of the shot noise. Shot noise suppression and the signatures of coherent transport were observed in the negative differential resistance (NDR) region by using the cross-correlation measurement technique. The temperature dependent transport behaviors are discussed.

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