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Effect of the p-type GaN thickness on the near-ultraviolet light-emitting diodes
- Choi, Hyo-Shik;
- Shin, Dong Soo;
- Shim, Jong In
Citations
SCOPUS
0초록
We analyzed the influence of the p-type GaN layer thickness on the 380nm band near-ultraviolet light-emitting diodes. Both electrical and optical characteristics of the LEDs were getting worse p-type GaN layer thickness increases with growth time. We suggest that the possible degradation mechanisms of characteristics are due to the increase of the non-radiative (NR) recombination rate in the active region as a result of thermal damage during p-type GaN layer growth process. © 2015 IEEE.
키워드
Degradation; III-V semiconductors; Light emitting diodes; Ultraviolet radiation; Active regions; Degradation mechanism; Growth time; Near-ultraviolet light-emitting diode; Non-radiative; Optical characteristics; Recombination rate; Thermal damage; Gallium nitride
- 제목
- Effect of the p-type GaN thickness on the near-ultraviolet light-emitting diodes
- 저자
- Choi, Hyo-Shik; Shin, Dong Soo; Shim, Jong In
- 발행일
- 2016-01
- 유형
- Conference Paper
- 저널명
- 2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015
- 권
- 2
- 페이지
- 1 ~ 2
- 언어
- ENG
- 출판사
- Institute of Electrical and Electronics Engineers Inc.
- 발행국가
- 미국
- 분량
- 2 페이지
- ISSN
- P 0000-0000