Ion-Gel-Assisted MoS2 Transfer Method for Low-Voltage, High-Performance MoS2/ITZO Heterojunction Phototransistor Application

초록

Molybdenum disulfide (MoS2) is a compelling candidate for visible-light detection due to its strong optical absorption and tunable bandgap, yet the development of high-performance MoS2 photodetectors remains limited by challenges in scalable integration, low-voltage operation, and efficient photoresponse. Here, we report an ion-gel-assisted transfer strategy that enables the fabrication of large-area MoS2/ion gel films that are suitable for low-power phototransistor applications. The transferred MoS2/ion gel stack is laminated onto an indium-tin-zinc-oxide (ITZO) layer on a glass substrate to fabricate a MoS2/ITZO heterojunction phototransistor, with the ion gel serving as an ultrathin, high-capacitance gate dielectric. The resulting phototransistor exhibits a field-effect mobility of 4.12 cm(2)/Vs, an on/off current ratio of 4.9 & times; 10(5), and a subthreshold swing of 0.17 V/dec. Under 635, 520, and 405 nm illumination with a power density of 4.5 mW/cm(2), it achieves responsivities of 0.58, 1.82, and 5.56 A W-1 and detectivities of 5.90 & times; 10(9), 1.86 & times; 10(10), and 5.68 & times; 10(10) Jones, respectively. These findings demonstrate that the ion-gel-assisted transfer process offers a robust route to high-performance, low-voltage photodetection and provides a promising platform for next-generation optoelectronic technologies.

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