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A Ku-band High Gain 40 W GaN HPA MMIC for Satellite Systems in a 0.25- μm GaN Technology
- Sim, Taejoo;
- Lee, Seungju;
- Lee, Dongmin;
- Choe, Wonseok;
- Kim, Minchul;
- ... Kim, Junghyun;
- 외 3명
Citations
SCOPUS
5초록
This study focuses on the design and validation of an internally matched high-power amplifier monolithic microwave integrated circuit (MMIC) for Ku-band solid-state power amplifier (SSPA) system integration. The designed MMIC exhibits sufficient power gain and output power characteristics, making it suitable for SSPA applications. The MMIC offers a compact and cost-effective SSPA configuration by reducing the number of components, such as gain blocks, isolators, and power combiners. The results show a performance of more than 40 W output power with a considerably high saturated power gain (greater than 22 dB) over the entire band (15.25-16.25 GHz). © 2024 IEEE.
키워드
gallium nitride (GaN); mmWave; power amplifiers (PAs); satellite communications (SATCOM); SSPA
- 제목
- A Ku-band High Gain 40 W GaN HPA MMIC for Satellite Systems in a 0.25- μm GaN Technology
- 저자
- Sim, Taejoo; Lee, Seungju; Lee, Dongmin; Choe, Wonseok; Kim, Minchul; Kim, Sangmo; Lee, Youngwan; Na, Kyoungil; Kim, Junghyun
- 발행일
- 2024-01
- 유형
- Conference paper
- 저널명
- 2024 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR)
- 페이지
- 31 ~ 34
- 언어
- ENG
- 출판사
- Institute of Electrical and Electronics Engineers Inc.
- 발행국가
- 미국
- 분량
- 4 페이지
- ISSN
- P 0000-0000