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Effects of metal electrodes on the resistive memory switching property of NiO thin films
- Lee, C. B.;
- Kang, B. S.;
- Benayad, A.;
- Lee, M. J.;
- Ahn, S. -E.;
- 외 4명
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187초록
The effects of various metal electrodes on the resistive switching of NiO thin films were investigated. Contrary to the belief that Pt is used for its high work function, which enables Ohmic contact to p-type NiO, resistive switching was observed in films with Ta or Al electrodes with a low work function in the as-deposited state. The resistive switching of films with a Ag or Cu top electrode with a low work function and high free energy of oxidation shows the importance of the formation of an oxide layer at the metal/NiO interface. (C) 2008 American Institute of Physics.
키워드
Electrodes; Metallizing; Metals; Ohmic contacts; Oxide films; Platinum; Silver; Switching; Switching systems; Tantalum; Thick films; Thin films; Work function; Al electrodes; As-deposited state; High work function; Low-work functions; Metal electrodes; NiO thin films; Oxide layers; P-type Nio; Resistive memory; Resistive switching
- 제목
- Effects of metal electrodes on the resistive memory switching property of NiO thin films
- 저자
- Lee, C. B.; Kang, B. S.; Benayad, A.; Lee, M. J.; Ahn, S. -E.; Kim, K. H.; Stefanovich, G.; Park, Y.; Yoo, I. K.
- 발행일
- 2008-07
- 유형
- Article
- 권
- 93
- 호
- 4
- 페이지
- 1 ~ 4
- 언어
- ENG
- 출판사
- AMER INST PHYSICS
- 발행국가
- 미국
- 분량
- 4 페이지
- ISSN
- P 0003-6951