Universal Method to Determine the Dynamic NBIS- and PBS-induced Instabilities on Self-aligned Coplanar InGaZnO Thin-film Transistors

초록

The method for dynamically calculating the NBIS- and PBS- induced ΔVT's is proposed based on experimentally extracted density-of-states and is demonstrated in top-gate self-aligned coplanar amorphous InGaZnO thin-film transistors. The effect of illuminance as well as the bias-dependence is successfully taken into account. Proposed method is potentially useful for the instability-aware design of OLED display backplanes. © 2018 SID.

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