LDO regulator with high power supply rejection at 10MHz

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초록

A new high-frequency power supply rejection (PSR) improvement technique is presented for a low-dropout (LDO) regulator. The proposed technique utilizes a negative capacitance at the gate of the power transistor to enhance the PSR at high frequencies by neutralizing the effect of parasitic capacitances. The simulation results show that the LDO is able to achieve a PSR of -67.9 dB at 10 MHz.

키워드

low-dropout regulatorpower supply rejectionnegative capacitanceDROP-OUT REGULATORCMOSCANCELLATION
제목
LDO regulator with high power supply rejection at 10MHz
저자
Javed, KhurramRoh, Jeongjin
DOI
10.1587/elex.13.20160665
발행일
2016-12
유형
Article
저널명
IEICE Electronics Express
13
24
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