Investing the Effectiveness of Retention Performance in a Non-Volatile Floating Gate Memory Device with a Core-Shell Structure of CdSe Nanoparticles

  • Lee, Dong-Hoon
  • Kim, Jung-Min
  • Lim, Ki-Tae
  • Cho, Hyeong Jun
  • Bang, Jin Ho
  • 외 1명
Citations

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초록

In this paper, we empirically investigate the retention performance of organic non-volatile floating gate memory devices with CdSe nanoparticles (NPs) as charge trapping elements. Core-structured CdSe NPs or core-shell-structured ZnS/CdSe NPs were mixed in PMMA and their performance in pentacene based device was compared. The NPs and self-organized thin tunneling PMMA inside the devices exhibited hysteresis by trapping hole during capacitance-voltage characterization. Despite of core-structured NPs showing a larger memory window, the retention time was too short to be adopted by an industry. By contrast core-shell structured NPs showed an improved retention time of >10000 seconds than core-structure NCs. Based on these results and the energy band structure, we propose the retention mechanism of each NPs. This investigation of retention performance provides a comparative and systematic study of the charging/discharging behaviors of NPs based memory devices.

키워드

retentionnanoparticlecore-shell structureorganic memorypentaceneORGANIC SOLAR-CELLSNANOCRYSTALSSONOS
제목
Investing the Effectiveness of Retention Performance in a Non-Volatile Floating Gate Memory Device with a Core-Shell Structure of CdSe Nanoparticles
저자
Lee, Dong-HoonKim, Jung-MinLim, Ki-TaeCho, Hyeong JunBang, Jin HoKim, Yong-Sang
DOI
10.1007/s13391-016-5387-8
발행일
2016-03
유형
Article
저널명
Electronic Materials Letters
12
2
페이지
276 ~ 280