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Investing the Effectiveness of Retention Performance in a Non-Volatile Floating Gate Memory Device with a Core-Shell Structure of CdSe Nanoparticles
- Lee, Dong-Hoon;
- Kim, Jung-Min;
- Lim, Ki-Tae;
- Cho, Hyeong Jun;
- Bang, Jin Ho;
- 외 1명
WEB OF SCIENCE
6SCOPUS
5초록
In this paper, we empirically investigate the retention performance of organic non-volatile floating gate memory devices with CdSe nanoparticles (NPs) as charge trapping elements. Core-structured CdSe NPs or core-shell-structured ZnS/CdSe NPs were mixed in PMMA and their performance in pentacene based device was compared. The NPs and self-organized thin tunneling PMMA inside the devices exhibited hysteresis by trapping hole during capacitance-voltage characterization. Despite of core-structured NPs showing a larger memory window, the retention time was too short to be adopted by an industry. By contrast core-shell structured NPs showed an improved retention time of >10000 seconds than core-structure NCs. Based on these results and the energy band structure, we propose the retention mechanism of each NPs. This investigation of retention performance provides a comparative and systematic study of the charging/discharging behaviors of NPs based memory devices.
키워드
- 제목
- Investing the Effectiveness of Retention Performance in a Non-Volatile Floating Gate Memory Device with a Core-Shell Structure of CdSe Nanoparticles
- 저자
- Lee, Dong-Hoon; Kim, Jung-Min; Lim, Ki-Tae; Cho, Hyeong Jun; Bang, Jin Ho; Kim, Yong-Sang
- 발행일
- 2016-03
- 유형
- Article
- 권
- 12
- 호
- 2
- 페이지
- 276 ~ 280